Search results for " voltage stress"

showing 3 items of 3 documents

Experimental Validation of Maximum Constant Boost Control and Switching Frequency Optimal for three-phase Quasi-Z-Source Converters

2020

This paper presents a modified modulation scheme for quasi-Z-Source converters, based on the Maximum Constant Boost Control (MCBC) concept and Switching Frequency Optimal (SFO) as reference signal. The effectiveness of the proposed technique is validated by comparing the obtained results (in terms of AC harmonic content and voltage stress) with those carried out from traditional modulation schemes. For this reason, a test bench has been assembled and the benefits of the SFO MCBC modulation scheme have been valuated.

voltage stressTest benchQuasi-Z-source InverterSettore ING-IND/32 - Convertitori Macchine E Azionamenti ElettriciConvertersSignalSettore ING-IND/31 - ElettrotecnicaharmonicThree-phaseModulationControl theorymodulation techniqueHarmonicsHarmonicharmonics modulation techniques Quasi-Z-source Inverter voltage stressMathematicsVoltage2020 2nd IEEE International Conference on Industrial Electronics for Sustainable Energy Systems (IESES)
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Performance Comparison of modified modulation Techniques for Quasi-Z-Source Converters

2020

The single-stage converters represent an innovation in the field of power electronics thanks their features. Aim of this work consists in the improvement of the performances of quasi-Z-Source converters by adopting a modified modulation technique, which is based on the Maximum Constant Boost Control (MCBC) and Switching Frequency Optimal (SFO). The results in terms of voltage stress and harmonic content are compared with those obtained with conventional techniques, demonstrating the effectiveness of the proposed modulation scheme.

Quasi-Z-source Inverter modulation techniques harmonics voltage stress.Computer science020209 energy020208 electrical & electronic engineering02 engineering and technologySettore ING-IND/32 - Convertitori Macchine E Azionamenti ElettriciConvertersStress (mechanics)Settore ING-IND/31 - ElettrotecnicaModulationHarmonicsPower electronics0202 electrical engineering electronic engineering information engineeringHarmonicElectronic engineeringConstant (mathematics)Voltage2020 IEEE 20th Mediterranean Electrotechnical Conference ( MELECON)
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Hot carrier effects in n-MOSFETs with SiO2/HfO2/HfSiO gate stack and TaN metal gate

2009

Charge trapping and trap generation in field-effect transistors with SiO2/HfO2/HfSiO gate stack and TaN metal gate electrode are investigated under uniform and non-uniform charge injection along the channel. Compared to constant voltage stress (CVS), hot carrier stress (HCS) exhibits more severe degradation in transconductance and subthreshold swing. By applying a detrapping bias, it is demonstrated that charge trapping induced degradation is reversible during CVS, while the damage is permanent for hot carrier injection case. © 2008 Elsevier B.V. All rights reserved.

Materials sciencebusiness.industryTransconductanceTransistorTrappingCondensed Matter PhysicsSettore ING-INF/01 - ElettronicaAtomic and Molecular Physics and OpticsSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialslaw.inventionStress (mechanics)lawElectrodeOptoelectronicsDegradation (geology)High-k dielectrics Hot carrier stress Constant voltage stressElectrical and Electronic EngineeringMetal gatebusinessHot-carrier injection
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